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CY62127DV30 MoBL(R)
1 Mb (64K x 16) Static RAM
Features
* Very high speed: 45 ns * Wide voltage range: 2.2V to 3.6V * Pin compatible with CY62127BV * Ultra-low active power -- Typical active current: 0.85 mA @ f = 1 MHz -- Typical active current: 5 mA @ f = fMAX * Ultra-low standby power * Easy memory expansion with CE and OE features * Automatic power-down when deselected * Packages offered in a 48-ball FBGA and a 44-lead TSOP Type II * Also available in Lead-Free 48-ball FBGA, and 44-lead TSOP Type II packages also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or during a write operation (CE LOW and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes.
Functional
Description[1]
The CY62127DV30 is a high-performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery LifeTM (MoBL(R)) in portable applications such as cellular telephones. The device
Logic Block Diagram
DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
10
ROW DECODER
64K x 16 RAM Array 2048 x 512
SENSE AMPS
I/O0 - I/O7 I/O8 - I/O15
COLUMN DECODER BHE WE CE OE BLE CE BHE BLE
A11
Pow er Down Circuit
Note: 1. For best-practice recommendations, please refer to the Cypress application note "System Design Guidelines" on http://www.cypress.com.
Cypress Semiconductor Corporation Document #: 38-05229 Rev. *D
*
3901 North First Street
A12 A13 A14 A15
*
San Jose, CA 95134 * 408-943-2600 Revised February 2, 2005
CY62127DV30 MoBL(R)
Pin Configuration[2, 3]
FBGA (Top View) 4 5 3 A0 A3 A5 NC A1 A4 A6 A7 NC A15 A13 A10 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 TSOP II (Forward) Top View A B C D E F G H A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A15 A14 A13 A12 NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
1 BLE I/O8 I/O9 VSS VCC I/O14 I/O15 NC
2 OE
6 NC I/O0 I/O2 VCC VSS I/O6 I/O7 NC
BHE I/O10 I/O11
I/O12 DNU I/O13 NC A8 A14 A12 A9
A5 A6 A7 OE BHE BLE I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC
Product Portfolio
Power Dissipation Operating, ICC (mA) VCC Range (V) Product CY62127DV30L CY62127DV30LL CY62127DV30L CY62127DV30LL CY62127DV30L CY62127DV30LL 2.2 3.0 3.6 2.2 3.0 3.6 Min. 2.2 Typ. 3.0 Max. 3.6 Speed (ns) 45 45 55 55 70 70 f = 1 MHz Typ[4] 0.85 0.85 0.85 0.85 0.85 0.85 Max. 1.5 1.5 1.5 1.5 1.5 1.5 f = fMAX Typ.[4] 6.5 6.5 5 5 5 5 Max. 13 13 10 10 10 10 Standby, ISB2 (A) Typ.[4] 1.5 1.5 1.5 1.5 1.5 1.5 Max. 5 4 5 4 5 4
Notes: 2. NC pins are not connected to the die. 3. E3 (DNU) can be left as NC or Vss to ensure proper operation. (Expansion Pins on FBGA Package: E4 - 2M, D3 - 4M, H1 - 8M, G2 - 16M, H6 - 32M). 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25C.
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CY62127DV30 MoBL(R)
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature .................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage to Ground Potential ......................................................................... -0.3V to 3.9V DC Voltage Applied to Outputs in High-Z State[5] ....................................-0.3V to VCC + 0.3V DC Input Voltage[5] ................................ -0.3V to VCC + 0.3V Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... > 200 mA
Operating Range
Range Industrial Ambient Temperature (TA) -40C to +85C VCC[6] 2.2V to 3.6V
DC Electrical Characteristics (Over the Operating Range)
CY62127DV30-45 CY62127DV30-55 CY62127DV30-70 Parameter Description VOH VOL VIH Test Conditions Min. Typ.[4] Max. Min. Typ.[4] Max. Min. Typ.[4] Max. Unit 2.0 2.4 0.4 0.4 1.8 2.2 -0.3 -0.3 -1 VCC 1.8 + 0.3 VCC 2.2 + 0.3 0.6 0.8 +1 -0.3 -0.3 -1 2.0 2.4 0.4 0.4 VCC 1.8 + 0.3 VCC 2.2 + 0.3 0.6 0.8 +1 -0.3 -0.3 -1 2.0 2.4 0.4 0.4 VCC + 0.3 VCC + 0.3 0.6 0.8 +1 A V V V V Output HIGH 2.2 < VCC < 2.7 IOH = -0.1 mA Voltage 2.7 < VCC < 3.6 IOH = -1.0 mA Output LOW Voltage Input HIGH Voltage 2.2 < VCC < 2.7 IOL = 0.1 mA 2.7 < VCC < 3.6 IOL = 2.1 mA 2.2 < VCC < 2.7 2.7 < VCC < 3.6 VIL IIX IOZ ICC Input LOW Voltage Input Leakage Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-down Current-- CMOS Inputs 2.2 < VCC < 2.7 2.7 < VCC < 3.6 GND < VI < VCC GND < VO < VCC, Output Disabled f = fMAX = 1/tRC VCC = 3.6V, IOUT = 0 mA, f = 1 MHz CMOS level CE > VCC - 0.2V, L VIN > VCC - 0.2V, VIN < 0.2V, LL f = fMAX (Address and Data Only), f = 0 (OE, WE, BHE and BLE) CE > VCC - 0.2V, VIN > VCC - 0.2V or VIN < 0.2V, f = 0, VCC = 3.6V L LL
-1
+1
-1
+1
-1
+1
A
6.5 0.85 1.5 1.5
13 1.5 5 4
5 0.85 1.5 1.5
10 1.5 5 4
5 0.85 1.5 1.5
10 1.5 5 4
mA
ISB1
A
ISB2
Automatic CE Power-down Current-- CMOS Inputs
1.5 1.5
5 4
1.5 1.5
5 4
1.5 1.5
5 4
A
Notes: 5. VIL(min.) = -2.0V for pulse durations less than 20 ns., VIH(max.) = VCC+0.75V for pulse durations less than 20 ns. 6. Full device Operation Requires linear Ramp of VCC from 0V to VCC(min) & VCC must be stable at VCC(min) for 500 s.
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CY62127DV30 MoBL(R)
Capacitance[7]
Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25C, f = 1 MHz VCC = VCC(typ) Max. 8 8 Unit pF pF
Thermal Resistance
Parameter JA JC Description Thermal Resistance (Junction to Ambient)[7] Thermal Resistance (Junction to Case)
[7]
Test Conditions Still Air, soldered on a 3 x 4.5 inch, two-layer printed circuit board
FBGA TSOP II Unit 55 12 76 11 C/W C/W
AC Test Loads and Waveforms[8]
R1 VCC OUTPUT CL = 50 pF INCLUDING JIG AND SCOPE Equivalent to: RTH R2
ALL INPUT PULSES VCC Typ GND 10% 90% 90% 10% Fall Time: 1 V/ns
Rise Time: 1 V/ns
THEVENIN EQUIVALENT VTH
OUTPUT
Parameters R 1 R 2 RTH VTH
2.5V (2.2- 2.7V) 16600 15400 8000 1.2
3.0V (2.7- 3.6V) 1103 1554 645 1.75
Unit V
Data Retention Characteristics
Parameter VDR ICCDR tCDR[7] tR[9] Description VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time VCC=1.5V, CE > VCC - 0.2V, VIN > VCC - 0.2V or VIN < 0.2V L LL 0 200 Conditions Min. 1.5 4 3 ns s Typ.[4] Max. Unit V A
Data Retention Waveform[10]
VCC CE or BHE. BLE
Notes: 7. Tested initially and after any design or proces changes that may affect these parameters. 8. Test condition for the 45-ns part is a load capacitance of 30 pF. 9. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 200 s. 10. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the Chip Enable signals or by disabling both.
V
CC(min.)
DATA RETENTION MODE VDR > 1.5V
V CC(min.)
tCDR
tR
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CY62127DV30 MoBL(R)
Switching Characteristics (Over the Operating Range)[11]
CY62127DV30-45 [8] Parameter Read Cycle tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tDBE tLZBE[13] tHZBE Write Cycle[15] tWC tSCE tAW tHA tSA tPWE tBW tSD tHD tHZWE tLZWE Write Cycle Time CE LOW to Write End Address Set-up to Write End Address Hold from Write End Address Set-up to Write Start WE Pulse Width BLE/BHE LOW to Write End Data Set-up to Write End Data Hold from Write End WE LOW to High Z[12,14]
[12]
CY62127DV30-55 Min. 55 Max.
CY62127DV30-70 Min. 70 Max. Unit ns 70 10 70 35 5 25 10 25 0 70 70 5 25 70 60 60 0 0 50 60 30 0 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 25 5 ns ns
Description Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z
[12]
Min. 45
Max.
45 10 45 25 5 15 10 20 0 45 45 5 15 45 40 40 0 0 35 40 25 0 15 10 10 55 40 40 0 0 40 40 25 0 5 0 10 5 10
55 55 25 20 20 55 55 20
OE HIGH to High Z[12,14] CE LOW to Low Z[12] CE HIGH to High Z[12,14] CE LOW to Power-up CE HIGH to Power-down BLE/BHE LOW to Data Valid BLE/BHE LOW to Low BLE/BHE HIGH to Z[12] High-Z[12,14]
20
WE HIGH to Low Z
Notes: 11. Test conditions assume signal transition time of 1V/ns or less, timing reference levels of VCC(typ.)/2, input pulse levels of 0 to VCC(typ.), and output loading of the specified IOL. 12. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 13. If both byte enables are toggled together, this value is 10 ns. 14. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state. 15. The internal Write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write.
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CY62127DV30 MoBL(R)
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)[16,17]
tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID
Read Cycle No. 2 (OE Controlled)[16,17, 18]
Notes: 16. Device is continuously selected. OE, CE = VIL, BHE, BLE = VIL. 17. WE is HIGH for Read cycle. 18. Address valid prior to or coincident with CE, BHE, BLE transition LOW.
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CY62127DV30 MoBL(R)
Switching Waveforms (continued)
Write Cycle No. 1 (WE Controlled)[14, 15, 19, 20, 21]
tWC ADDRESS tSCE CE tAW tSA WE tPWE tHA
BHE/BLE
tBW
OE tSD DATA I/O
DON'T CARE
tHD
DATAIN VALID tHZOE
Write Cycle No. 2 (CE Controlled)[14, 15, 19, 20, 21]
tWC ADDRESS tSCE CE
tSA
WE
tAW tPWE
tHA
BHE / BLE
tBW
OE tSD DATA I/O
DON'T CARE
tHD
DATA IN VALID tHZOE
Notes: 19. Data I/O is high-impedance if OE = VIH. 20. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 21. During the DON'T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.
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CY62127DV30 MoBL(R)
Switching Waveforms (continued)
Write Cycle No. 3 (WE Controlled, OE LOW)[ 20, 21]
tWC ADDRESS tSCE CE tBW
BHE/BLE tAW tSA WE
tHA tPWE
tSD DATA I/O
DON'T CARE
tHD
DATAIN VALID tHZWE tLZWE
Write Cycle No. 4 (BHE-/BLE-controlled, OE
LOW)[20, 21]
tWC
ADDRESS
CE tSCE
tAW
tHA tBW
BHE/BLE
tSA tPWE
WE
tSD
tHD
DATA I/O
DON'T CARE
DATAIN VALID
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CY62127DV30 MoBL(R)
Truth Table
CE H X L L L L L L L L L WE X X H H H H H H L L L OE X X L L L H H H X X X BHE X H L H L L H L L H L BLE X H L L H L L H L L H I/O0-I/O7 High Z High Z Data Out Data Out High Z High Z High Z High Z Data In Data In High Z I/O8-I/O15 High Z High Z Data Out High Z Data Out High Z High Z High Z Data In High Z Data In Mode Deselect/Power-down Deselect/Power-down Read All bits Read Lower Byte Only Read Upper Byte Only Output Disabled Output Disabled Output Disabled Write Write Lower Byte Only Write Upper Byte Only Power Standby (I SB ) Standby (I SB ) Active (I CC ) Active (I CC ) Active (I CC ) Active (I CC ) Active (I CC ) Active (I CC ) Active (I CC ) Active (I CC ) Active (I CC )
Ordering Information
Speed (ns) 45 Ordering Code CY62127DV30LL-45BVI CY62127DV30LL-45BVXI CY62127DV30LL-45ZSI CY62127DV30LL-45ZSXI 55 CY62127DV30L-55BVI CY62127DV30LL-55BVI CY62127DV30LL-55BVXI CY62127DV30L-55ZSI CY62127DV30L-55ZSXI CY62127DV30LL-55ZSI 70 CY62127DV30L-70BVI CY62127DV30LL-70BVI CY62127DV30LL-70BVXI CY62127DV30L-70ZSI CY62127DV30LL-70ZSI Package Name BV48A BV48A ZS44 ZS44 BV48A BV48A BV48A ZS44 ZS44 ZS44 BV48A BV48A BV48A ZS44 ZS44 Package Type 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) (Pb-Free) 44-lead TSOP Type II 44-lead TSOP Type II (Pb-Free) 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) (Pb-Free) 44-lead TSOP Type II 44-lead TSOP Type II (Pb-Free) 44-lead TSOP Type II 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) (Pb-Free) 44-lead TSOP Type II 44-lead TSOP Type II Industrial Industrial Operating Range Industrial
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CY62127DV30 MoBL(R)
Package Diagrams
48-Lead VFBGA (6 x 8 x 1 mm) BV48A
51-85150-*B
Document #: 38-05229 Rev. *D
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CY62127DV30 MoBL(R)
Package Diagrams
44-pin TSOP II ZS44
51-85087-*A
MoBL is a registered trademark, and MoBL2 and More Battery Life are trademarks of Cypress Semiconductor. All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05229 Rev. *D
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(c) Cypress Semiconductor Corporation, 2005. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY62127DV30 MoBL(R)
Document History Page
Document Title: CY62127DV30 MoBL 1 Mb (64K x 16) Static RAM Document Number: 38-05229 REV. ** *A ECN NO. Issue Date 117690 127311 08/27/02 06/13/03 Orig. of Change JUI MPR New Data Sheet Changed From Advanced Status to Preliminary Changed Isb2 to 5 A (L), 4 A (LL) Changed Iccdr to 4 A (L), 3 A (LL) Changed Cin from 6 pF to 8 pF Changed from Preliminary to Final Add 70-ns speed, updated ordering information Changed Icc 1 MHz typ from 0.5 mA to 0.85 mA Added 45-ns Speed Bin in AC, DC and Ordering Information tables Added Footnote # 8 on page #4 Added Lead-Free Package ordering information on page# 9 Changed 44-lead TSOP-II package name from Z44 to ZS44 Description of Change
*B *C *D
128341 129000 316039
07/22/03 08/29/03 See ECN
JUI CDY PCI
Document #: 38-05229 Rev. *D
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